cw operation of an AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition
- 15 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6), 661-663
- https://doi.org/10.1063/1.95363
Abstract
Continuous wave operation of an Al0.21Ga0.31In0.48P /Ga0.52In0.48P /Al0.21Ga0.31In0.48P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 μm and the threshold current was 55 mA for a diode with a nitride‐insulated, 8‐μm‐wide and 250‐μm‐long stripe geometry.Keywords
This publication has 2 references indexed in Scilit:
- Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperaturesJournal of Applied Physics, 1983
- Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1983