Silicon Vertically Integrated Nanowire Field Effect Transistors
Top Cited Papers
- 30 March 2006
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (5), 973-977
- https://doi.org/10.1021/nl060166j
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Encoding Electronic Properties by Synthesis of Axial Modulation-Doped Silicon NanowiresScience, 2005
- Bridging Dimensions: Demultiplexing Ultrahigh-Density Nanowire CircuitsScience, 2005
- Silicon nanowires as enhancement-mode Schottky barrier field-effect transistorsNanotechnology, 2005
- Fabrication of platinum nanoparticles and nanowires by electron beam lithography (EBL) and nanoimprint lithography (NIL): comparison of ethylene hydrogenation kineticsCatalysis Letters, 2005
- Diameter control of Ti-catalyzed silicon nanowiresJournal of Crystal Growth, 2004
- Mobility and transverse electric field effects in channel conduction of wrap-around-gate nanowire MOSFETsIEE Proceedings - Circuits, Devices and Systems, 2004
- High-performance thin-film transistors using semiconductor nanowires and nanoribbonsNature, 2003
- High Performance Silicon Nanowire Field Effect TransistorsNano Letters, 2003
- The vertical replacement-gate (VRG) MOSFETSolid-State Electronics, 2002
- FinFET-a self-aligned double-gate MOSFET scalable to 20 nmIEEE Transactions on Electron Devices, 2000