Junction formation with pure and doped polyacetylene
- 1 July 1979
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (1), 83-85
- https://doi.org/10.1063/1.90902
Abstract
A variety of rectifying junctions have been fabricated using doped and undoped (CH)x. Schottky diodes formed between metallic AsF5‐doped (CH)x and n‐type semiconductors indicate high [CH(AsF5)y]x electronegativity. The p‐type character of undoped trans‐ (CH)x is confirmed by Schottky‐barrier formation with low‐work‐function metals. An undoped p‐ (CH)x : n‐ZnS heterojunction has been demonstrated with an open‐circuit voltage of 0.8 V. These results point to the potential of (CH)x as a photosensitive material for use in solar‐cell applications.Keywords
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