Carrier lifetime measurements on electron-irradiated silicon crystals
- 16 August 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 30 (2), 593-599
- https://doi.org/10.1002/pssa.2210300220
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Effective recombination levels in n- and p-type silicon irradiated by 4·5 MeV electronsSolid-State Electronics, 1973