Gate‐Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field‐Effect Transistors
- 15 November 2010
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 21 (1), 100-107
- https://doi.org/10.1002/adfm.201001560
Abstract
No abstract availableKeywords
This publication has 52 references indexed in Scilit:
- High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient AtmosphereAdvanced Materials, 2009
- Fabrication and Gas‐Sensing Properties of Porous ZnO NanoplatesAdvanced Materials, 2008
- Bias-stress induced contact and channel degradation in staggered and coplanar organic field-effect transistorsApplied Physics Letters, 2008
- A Nitrogen Dioxide Sensor Based on an Organic Transistor Constructed from Amorphous Semiconducting PolymersAdvanced Materials, 2007
- Carbon nanotube sensors for exhaled breath componentsNanotechnology, 2007
- Metal oxide-based gas sensor research: How to?Sensors and Actuators B: Chemical, 2007
- Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulatorJournal of Applied Physics, 2004
- Low‐k Insulators as the Choice of Dielectrics in Organic Field‐Effect TransistorsAdvanced Functional Materials, 2003
- Nanotube Molecular Wires as Chemical SensorsScience, 2000
- Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous siliconPhysical Review Letters, 1987