Vapor Phase Transport and Epitaxial Growth of GaAs[sub 1?x]P[sub x] Using Water Vapor

Abstract

It was found that :Te doped layers can be homogenously transported by a vapor phase technique using water vapor. Epitaxial layers of the same As‐P ratio as the melt‐grown source wafers were grown onto and [100] substrates. The reaction proceeds via the following equation is the actual transporting species. At a water vapor pressure of 0.286 mm (ice at −30°C) an activation energy of 85 kcal/mole was calculated. The amount of material transported was found to be a function of entering the system, (b) the temperature difference between source and substrate, (c) the composition of the source material, and of course (d) the absolute source temperature. The transport of with water vapor was found to have an activation energy that is nonconcentration dependent within the range of water vapor pressures studied. Certain aspects of Te doping were studied; the oxygen content of the epitaxial layers was studied via mass spectrographic techniques.