The operation of graded band gap base transistors at high currents
- 1 March 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (3), 237-243
- https://doi.org/10.1016/0038-1101(66)90108-0
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The high-injection-level operation of drift transistorsSolid-State Electronics, 1961
- Der DrifttransistorThe Science of Nature, 1953