Avalanche Multiplication and Electron Mobility in Indium Antimonide at High Electric Fields†
- 1 February 1958
- journal article
- research article
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 4 (2), 165-169
- https://doi.org/10.1080/00207215808953834
Abstract
The current-voltage characteristic of indium antimonide has been measured up to a field of 800 volts/cm. Avalanche multiplication was found to occur at fields above 150 volts/cm. No variation of electron mobility was found up to the highest fields used.Keywords
This publication has 3 references indexed in Scilit:
- VI. The Field-Dependence of Electron Mobility in GermaniumJournal of Electronics and Control, 1956
- Some Experiments on, and a Theory of, Surface BreakdownJournal of Applied Physics, 1956
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953