Measurements of deep levels in high-purity molecular beam epitaxial GaAs

Abstract

Constant capacitance deep‐level transient spectroscopy measurements are performed on molecular beam epitaxially grown GaAs layers with net carrier concentrations of 3.3–6.5×10¹⁴ cm⁻³. Four trap levels are detected, three of which are usually detected in molecular beam epitaxial layers, and the fourth, a very shallow trap at 30 meV, has not been previously reported. Determination of the concentrations for this new level dispute the accepted interpretation of Hall measurements near and above room temperature.