Mechanisms and kinetics of vapor-phase etching of GaAs and GaP
- 1 September 1980
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 9 (5), 883-904
- https://doi.org/10.1007/bf02822724
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Vapor‐Phase Etching and Polishing of GaAs Using Arsenic TrichlorideJournal of the Electrochemical Society, 1977
- Negative whiskers formed by solid-liquid-vapor mechanism during vaporization of ZnSJournal of Crystal Growth, 1977
- Vaporization mechanism and kinetics of AIIBVI compoundsJournal of Crystal Growth, 1977
- Vapor‐Phase Etching and Polishing of Gallium Arsenide Using Hydrogen Chloride GasJournal of the Electrochemical Society, 1975
- Oriented growth of whiskers of AIIIBV compounds by VLS‐mechanismCrystal Research and Technology, 1975
- Studies of the Vaporization Mechanism of Gallium Arsenide Single CrystalsThe Journal of Chemical Physics, 1971
- Vapor Phase Etching of GaAs in the H[sub 2]-H[sub 2]O Flow SystemJournal of the Electrochemical Society, 1970
- Vaporization Catalysis. The Decomposition of Gallium Nitride1The Journal of Physical Chemistry, 1965
- The Importance of Complex Gaseous Molecules in High Temperature SystemsThe Journal of Physical Chemistry, 1955