Radiation-enhanced diffusion of boron in germanium during ion implantation
- 1 January 1973
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 20 (3), 207-210
- https://doi.org/10.1080/00337577308232285
Abstract
An effect of radiation-enhanced diffusion during boron ion implantation into 200-500°C germanium substrates has been found. The boron-enhanced diffusion coefficient is independent of the temperature over the range 200-500°C during ion implantation, depends upon the dose rate of the incident ions and its value corresponds to the thermal diffusion of boron in germanium at 800°C.Keywords
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