The Dependence of the Hall Coefficient of a Mixed Semiconductor upon Magnetic Induction as Exemplified by Indium Antimonide
- 1 January 1957
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society. Section B
- Vol. 70 (1), 124-135
- https://doi.org/10.1088/0370-1301/70/1/318
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- A simple apparatus for recording the variation of Hall coefficient with temperatureJournal of Scientific Instruments, 1956
- Hall Effect and Conductivity of InSbPhysical Review B, 1955
- Electrical Properties of-Type Indium Antimonide at Low TemperaturesPhysical Review B, 1955
- Cyclotron and Spin Resonance in Indium AntimonidePhysical Review B, 1955
- Analysis of Magnetoresistance and Hall Coefficient in-Type Indium-Antimonide and-Type GermaniumPhysical Review B, 1954
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- The Two-Band Effect in ConductionProceedings of the Physical Society. Section A, 1952
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950