Subthreshold and near-threshold conduction in GaAs/AlGaAs MODFETs
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (10), 2281-2287
- https://doi.org/10.1109/16.40912
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Reduction of backgating effect in MBE-Grown GaAs/AlGaAs HEMT'sIEEE Electron Device Letters, 1987
- A subthreshold current model for GaAs MESFET'sIEEE Electron Device Letters, 1987
- Mobility of the two-dimensional electron gas at selectively doped n -type As/GaAs heterojunctions with controlled electron concentrationsPhysical Review B, 1986
- A MODFET dc model with improved pinchoff and saturation characteristicsIEEE Transactions on Electron Devices, 1986
- Classical versus quantum mechanical calculation of the electron distribution at the n-AlGaAs/GaAs heterointerfaceIEEE Transactions on Electron Devices, 1986
- Gate capacitance—Voltage characteristic of MODFET's: Its effect on transconductanceIEEE Transactions on Electron Devices, 1985
- Threshold and sheet concentration sensitivity of high electron mobility transistorsIEEE Transactions on Electron Devices, 1984
- Subbands and charge control in a two-dimensional electron gas field-effect transistorApplied Physics Letters, 1984
- Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1983
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982