Influence of substrate misorientation and temperature on MBE-grown Si
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 231-236
- https://doi.org/10.1016/0022-0248(87)90397-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High supersaturation layer-by-layer growth: Application to Si MBEJournal of Crystal Growth, 1986
- Nucleation of Vapor DepositsThe Journal of Chemical Physics, 1962
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951