Fabrication and Emission Characteristics of Polycrystalline Silicon Field Emitters
- 1 July 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (7B), L883
- https://doi.org/10.1143/jjap.34.l883
Abstract
A fabrication method and emission characteristics of polycrystalline silicon (poly-Si) gated field emitters have been presented. The fabrication combines mold emitter fabrication and anodic bonding techniques to transfer the emitters to a Pyrex glass substrate. The tantalum gated structures were fabricated by an etch-back technique using a photoresist process, and a gate opening of about 0.7 µ m has been successfully obtained. The emission characteristics of the fabricated poly-Si field emitters were also presented, showing high current drivability.Keywords
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