Investigations by SIMS of the bulk impurity diffusion of Ge in Si
- 1 October 1984
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 49 (4), 557-571
- https://doi.org/10.1080/01418618408236556
Abstract
The diffusion of germanium as a lattice impurity in silicon has been studied for 38 specimens, annealed at temperatures between 1149 and 1661 K. A total of 89 concentration profiles were evaluated by means of secondary-ion mass spectrometry. The diffusion coefficients were found to range between 2·0×l0−19 and 7·7 × 10−12 cm2s−1. The Arrhenius parameters are Do = 1·03 × 105cm2 s−1 and Q = 514·5kJmol−1. The results contradict the view suggested by Seeger and Chik (1968), that a transition takes place from an interstitial mechanism at high temperatures to a vacancy mechanism at low temperatures.Keywords
This publication has 7 references indexed in Scilit:
- Self-interstitials and vacancies in elemental semiconductors between absolute zero and the temperature of meltingPublished by Springer Nature ,2007
- The Diffusion Coefficient of Germanium in SiliconPhysica Status Solidi (a), 1982
- Sims investigations on the diffusion of Cu in Ag single crystalsActa Metallurgica, 1980
- Self-diffusion in intrinsic siliconApplied Physics Letters, 1979
- Self‐ and impurity diffusion in Ge and SiPhysica Status Solidi (b), 1975
- The diffusion of germanium in siliconJournal of Applied Physics, 1973
- Diffusion Mechanisms and Point Defects in Silicon and GermaniumPhysica Status Solidi (b), 1968