Microscopic Mechanism of Hydrogen Passivation of Acceptor Shallow Levels in Silicon
- 26 August 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 55 (9), 980-982
- https://doi.org/10.1103/physrevlett.55.980
Abstract
A microscopic model is proposed which explains recent observations that acceptor shallow levels in crystalline silicon can be inactivated by atomic hydrogen. We are assuming that substitutionalboron-interstitial-hydrogen complex pairs are being formed which passivate the shallow acceptor action of the boron impurity. Rigorous self-consistent calculations show that the acceptor level is removed from the gap and the boron electrical activity is clearly neutralized.Keywords
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