Scaling Theory of Melting Temperatures of Covalent Crystals
- 18 September 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 29 (12), 769-772
- https://doi.org/10.1103/physrevlett.29.769
Abstract
The melting temperatures of IV-IV, III-V, and some II-VI crystals are predicted with an accuracy generally better than 10%. Only empirical data for Si are used to fix scaling constants.Keywords
This publication has 11 references indexed in Scilit:
- Semiconductor–metal phase transformation of tetrahedrally coordinated semiconductorsPhysica Status Solidi (b), 1971
- Temperature Coefficient of the Refractive Index of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1970
- Spectroscopic Analysis of Cohesive Energies and Heats of Formation of Tetrahedrally Coordinated SemiconductorsPhysical Review B, 1970
- Ionicity of the Chemical Bond in CrystalsReviews of Modern Physics, 1970
- Temperature Dependence of the Wavelength-Modulation Spectra of GaAsPhysical Review Letters, 1970
- Binding energy and related properties of siliconPhysica Status Solidi (b), 1970
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition EnergiesPhysical Review B, 1969
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric ConstantPhysical Review B, 1969
- Liquid SemiconductorsPublished by Springer Nature ,1969
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967