Non-destructive detection of phosphorus oxide layers on semiconductor wafers
- 31 October 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (10), 1009-1017
- https://doi.org/10.1016/0038-1101(66)90076-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Stabilization of SiO2 Passivation Layers with P2O5IBM Journal of Research and Development, 1964
- Evidence for Oxidation Growth at the Oxide-Silicon Interface from Controlled Etch StudiesJournal of the Electrochemical Society, 1964
- Nondestructive Determination of Thickness and Refractive Index of Transparent FilmsIBM Journal of Research and Development, 1964