Measurements of the 1/f voltage noise in continuous metal films are reported. At room temperature, samples of pure metals and bismuth (with a carrier density smaller by 10/sup 5/) of similar volume had comparable noise. The results suggest that the noise arises from equilibrium temperature fluctuations modulating the resistance. Spatial correlation of the noise implied that the fluctuations obey a diffusion equation. The empirical inclusion of an explicit 1/f region and appropriate normalization lead to excellent agreement with the measured noise. If the fluctuations are assumed to be spatially correlated, the diffusion equation can yield an extended 1/f region in the power spectrum. The temperature response of a sample to delta and step function power inputs is shown to have the same shape as the autocorrelation function for uncorrelated and correlated temperature fluctuations, respectively. The spectrum obtained from the cosine transform of the measured step function response is in excellent agreement with the measured 1/f voltage noise spectrum. Spatially correlated equilibrium temperature fluctuations are not the dominant source of 1/f noise in semiconductors and metal films. However, the agreement between the low-frequency spectrum of fluctuations in the mean-square Johnson noise voltage and the resistance fluctuation spectrum measured in the presencemore » of a current demonstrates that in these systems the 1/f noise is also due to equilibrium resistance fluctuations. Loudness fluctuations in music and speech and pitch fluctuations in music also show the 1/f behavior. 1/f noise sources, consequently, are demonstrated to be the natural choice for stochastic composition. 26 figures, 1 table. (auth) « less