High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot-wall reactor
- 11 January 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (2), 160-162
- https://doi.org/10.1063/1.109357
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Growth of VPE InP/InGaAs on InP for photodiode applicationJournal of Crystal Growth, 1982
- Mass spectrometric and thermodynamics studies of the CVD of some III–V compoundsJournal of Crystal Growth, 1972