Growth and properties of single crystals of group I-III-VI2 ternary semiconductors
- 1 August 1971
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 4 (8), 1182-1185
- https://doi.org/10.1088/0022-3727/4/8/319
Abstract
Single crystals of five members of the I-III-VI2 ternary semiconductors have been grown by iodine vapour transport and variations of growth are reported. The measured energy gaps are 244 eV (CuGaS2), 206 eV (CuAlTe2), 251-261 eV (AgGaS2), 313 eV (AgAlS2) and 255 eV (AgAlSe2). The refractive index for CuGaS2 varies from 2825 at 525 nm to 2660 at 661 nm with refractive indices of 2720 and 2724 for two polarizations at 5892 nm.Keywords
This publication has 7 references indexed in Scilit:
- Preparation and properties of single crystal CuAlS2 and CuAlSe2Journal of Physics and Chemistry of Solids, 1969
- Optical activity in a non-enantiomorphous crystal: AgGaS2Acta Crystallographica Section A, 1968
- Some Cross-Substitutional Alloys of CdTeJournal of the Electrochemical Society, 1966
- CuGaSe2 and AgInSe2: Preparation and properties of single crystalsJournal of Physics and Chemistry of Solids, 1966
- High-Temperature Resistivity of the Chalcopyritic Compound CuInTe[sub 2]Journal of the Electrochemical Society, 1966
- New Semiconductors with the Chalcopyrite StructureJournal of the Electrochemical Society, 1956
- Untersuchungen über ternäre Chalkogenide. V. Über einige ternäre Chalkogenide mit ChalkopyritstrukturZeitschrift für anorganische und allgemeine Chemie, 1953