Crack formation in InP-GaxIn1−xAs-InP double-heterostructure fabrication
- 1 December 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (11), 740-741
- https://doi.org/10.1063/1.88923
Abstract
InP‐Ga0.47In0.53As‐InP double‐heterostructure laser diodes which emit infared radiation near 1.6 μm were prepared. At 77 K, the laser threshold current density was about 2500 A/cm2. Cracking of GaxIn1−xAs epitaxial layers on InP substrates due to lattice mismatch was observed, and the composition range of GaxIn1−xAs in which no cracking occurred was found.Keywords
This publication has 4 references indexed in Scilit:
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