Preparation and properties of CdSnP2/InP heterojunctions grown by LPE from Sn solution
- 1 March 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (3), 1302-1310
- https://doi.org/10.1063/1.1663406
Abstract
Heterojunctions of n‐type CdSnP2 on p‐type InP substrates have been prepared by LPE from Sn solutions. The tipping arrangement, solution composition, and temperature program for the preparation of high‐quality LPE layers are described. Heterodiodes prepared from such LPE wafers electroluminesce under forward bias at wavelengths near 1.6 μ with internal quantum efficiencies approaching 2% at room temperature. When used as photovoltaic detectors, the quantum efficiency of these diodes surpasses that of Si for λ>1.09 μ and exceeds 1% for all wavelengths between 0.96 and 1.3 μ.Keywords
This publication has 9 references indexed in Scilit:
- CdSnP2–InP heterodiodes for near-infrared light-emitting diodes and photovoltaic detectorsApplied Physics Letters, 1973
- On the ultimate lower limit of attenuation in glass optical waveguidesApplied Physics Letters, 1973
- Spontaneous- and Stimulated-Emission Spectra of CdSnP2Journal of Applied Physics, 1972
- Plasmaron Coupling and Laser Emission in Ag-DopedPhysical Review Letters, 1971
- The CdP2-Sn system and some properties of CdSnP2 crystalsMaterials Research Bulletin, 1971
- Electroreflectance Study of the Energy-Band Structure of CdSnPhysical Review B, 1970
- Electroreflectance of CdSnP2Physics Letters A, 1970
- Negative Crystal-Field Splitting of the Valence Bands in CdSnPhysical Review Letters, 1970
- CdSnP2 EMISSION AND DETECTION OF NEAR-INFRARED RADIATIONApplied Physics Letters, 1970