Spin dependent luminescence in hydrogenated amorphous silicon

Abstract

Large spin-dependent changes in the luminescence of undoped and doped glow-discharge-deposited amorphous silicon have been observed. A pair of luminescence quenching lines was found for all doping levels, the fractional change in luminescence intensity ΔL/L being independent of temperature. A pair of enhancing lines with ΔL/L falling off as T−2 was observed in undoped and lightly doped samples. The resonant lines are very similar to those found in light-induced electron spin resonance under the same conditions. Non-resonant field-dependent luminescence is also reported. Models related to spin excitation of thermaiized and non-thermaiized electron-hole pairs are presented.