Location of impurities in alkali halide crystals by channeling studies
- 15 August 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (16), 1425-1427
- https://doi.org/10.1016/0038-1098(71)90410-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Interstitial Stabilization and Color-Center Production in KBrPhysical Review B, 1970
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- Radiolysis of alkali halidesAdvances in Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Location of Inert Gas Atoms in KCl, CaF2, and UO2 Crystals by H+ and He2+ ``Channeling'' StudiesJournal of Applied Physics, 1967
- Interpretation of the temperature dependence of Ag+ dipole strengths in alkali halidesPhysica Status Solidi (b), 1966