Rapid electron-beam isothermal processing of arsenic-implanted NMOS devices

Abstract

Rapid isothermal annealing by the multiple-scan electron-beam method has been used to anneal arsenic-implanted resistors, diodes, and NMOS transistors. The method potentially provides independent control of activation and diffusion of the dopant. Resistors are shown to have sheet resistances close to expected values for the implant, diodes have very low leakage currents, and both long- and short-channel transistors have acceptable device characteristics. The process reduces the diffusion of source and drain implants into the channel region, and the study is designed to provide data for the application of isothermal e-beam annealing in VLSI circuit fabrication.