Effects of ionizing radiation on MOS devices
- 28 February 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (2), 123-131
- https://doi.org/10.1016/0038-1101(69)90121-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Radiation-induced space-charge buildup in MOS structuresIEEE Transactions on Electron Devices, 1967
- Surface Effects of Radiation on Semiconductor Devices*Bell System Technical Journal, 1967
- The Effects of Co60 Gamma Radiation on MOS DiodesIEEE Transactions on Nuclear Science, 1967
- Irradiation of MIS Capacitors with High Energy ElectronsIEEE Transactions on Nuclear Science, 1966
- Irradiation and annealing of silicon planar transistorsSolid-State Electronics, 1966
- A micron bit-size charge-storage devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1966
- Behaviour of m.o.s. structures under X ray irradiationElectronics Letters, 1966
- Planar-transistor stability under X ray irradiationElectronics Letters, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
- EFFECTS OF LOW-ENERGY ELECTRON IRRADIATION ON Si-INSULATED GATE FETsApplied Physics Letters, 1965