Dielectric functions of Si(111)2×1, Ge(111)2×1, GaAs(110) and GaP(110) surfaces obtained by polarized surface differential reflectivity
- 1 October 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 189-190, 1023-1027
- https://doi.org/10.1016/s0039-6028(87)80544-7
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Polarization dependence of optical transitions in GaP(1 1 0) and GaAs(1 1 0) surfaces studied with surface differential reflectivitySolid State Communications, 1987
- Conduction-band dispersion, critical points, and unoccupied surface states on GaAs(110): A high-resolution angle-resolved inverse photoemission studyPhysical Review B, 1985
- Polarization-dependent reflectivity of Si(111)-(2×1) surface above the gapPhysical Review B, 1985
- Differential Reflectivity of Si(111)2×1 Surface with Polarized Light: A Test for Surface StructurePhysical Review Letters, 1984
- Dielectric properties of the Si(111)2×1 surface: Optical constants and the energy-loss spectrumPhysical Review B, 1983
- New-Bonded Chain Model for Si(111)-(2×1) SurfacePhysical Review Letters, 1981
- Theoretical study of the electronic structure of GaP(110)Physical Review B, 1981
- Angle-resolved photoemission from GaAs (110) surface statesPhysics Letters A, 1978
- Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and SiPhysical Review B, 1971
- Differential reflection spectroscopy of very thin surface filmsSurface Science, 1971