Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions
- 20 December 2010
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 97 (25), 252110
- https://doi.org/10.1063/1.3525166
Abstract
Heterojunctions made of hydrogenated amorphous silicon and crystalline silicon are examined by conducting probe atomic force microscopy. Conductive channels at both and interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the surface in agreement with previous planar conductance measurements. The presence of a hole gas in structures implies a quite large valence band offset .
Keywords
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