Effect of Direct Current on Precipitation in Quenched Al + 4% Cu Thin Films
- 15 March 1972
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (6), 217-219
- https://doi.org/10.1063/1.1654117
Abstract
Resistance changes associated with precipitation in Al–Cu thin films were monitored during power annealing at current densities up to 4×106 A/cm2 and temperatures of ∼178 and 200 °C. The rate of change of resistance decreased as the current increased. It is argued that this decrease is due to the current inhibiting the precipitation of θ Al2Cu.Keywords
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