Charging of pattern features during plasma etching

Abstract

The localized charging of a rectangular trench during the plasma etching of a perfectly insulating surface was modeled assuming an isotropic electron flux and monodirectional ion bombardment. The field set up by the localized charging acts to deflect arriving ions, modifying the ion flux densities within the feature, and thus, etching rates. Preliminary simulations indicate that this may be important in the shaping of etching profiles.