Diffusion effects in ion implanted germanium
- 1 January 1970
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 6 (2), 257-261
- https://doi.org/10.1080/00337577008236304
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Passage of Heavy Ions Through MatterAnnual Review of Nuclear Science, 1963
- Diffusion of Antimony Out of Germanium and Some Properties of the Antimony-Germanium SystemPhysical Review B, 1957