Control of the chemical reactivity of a silicon single-crystal surface using the chemical modification technique
- 1 September 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (5), 2187-2191
- https://doi.org/10.1063/1.346521
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Epitaxial growth of silicon at low temperature by ultrahigh vacuum electron cyclotron resonance plasma chemical vapor depositionJournal of Applied Physics, 1988
- The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etchingJournal of Applied Physics, 1988
- Hydrogen chemisorption on the 100 (2 × 1) surfaces of Si and GeSurface Science, 1978
- Kinetics of the generation of atomic hydrogen and its adsorption on Si(110)Journal of Vacuum Science and Technology, 1977
- Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si(100)2 × 1Physical Review B, 1976
- Hydrogen chemisorption on the silicon (110) 5×1 surfaceJournal of Vacuum Science and Technology, 1976
- Si(111): Si—A Simple New Surface PhasePhysical Review Letters, 1975
- Hydrogen adsorption and surface structures of siliconSurface Science, 1974
- Surface Studies by Spectral Analysis of Internally Reflected Infrared Radiation: Hydrogen on SiliconThe Journal of Chemical Physics, 1963
- Adsorption of Hydrogen on SiliconThe Journal of Chemical Physics, 1959