Theoretical study of a Gunn diode in a resonant circuit

Abstract
A computer simulation of a GaAs Gunn diode in a parallel resonant circuit has been made to determine the optimum device and circuit parameters. The maximum dc to RF efficiency, 5 to 8 percent, is obtained when the product of doping and length is between 1012and 2 × 1012cm-2, the product of frequency and length is 107cm/s, and the bias voltage divided by length is 8000 V/cm for a load resistance of30 R_{0}where R0is the low-voltage resistance of the diode. The product of output power and load resistance varies with frequencyfasC f^{2}whereCis 12,000 watt-ohm-GHz2for a load resistance of50 R_{0}. The frequency can be varied over an octave tuning range by the resonant circuit.