Computer Simulation of Nucleation and Growth of Atom Clusters in Thin Films

Abstract

A computer has been used to simulate nucleation and growth of metal atom clusters on a crystalline substrate. The computer model allows the adsorbed metal atoms to move on the surface under the influence of both their mutual interaction and their interaction with the atoms of the substrate, until they form a cluster of minimum energy. The Morse potential function has been used to describe the interaction between the adsorbed atoms. The interaction between the substrate and the adsorbed atoms is described by an adsorption potential and a superposed sinusoidal potential determined by the activation energy of diffusion. Computed results are compared with those obtained in evaporation experiments.