The Anodic Oxidation of Vanadium:Transport Numbers of Metal and Oxygen and the Metal/Oxygen Ratio in the Oxide Films

Abstract

The techniques of ion implantation and Rutherford backscattering analysis have been used to determine the transport numbers of metal and oxygen during the anodic oxidation of vanadium. These were found to be 0.28 ± 0.05 and 0.72 ± 0.05, respectively. The Rutherford backscattering analysis simultaneously gives the ratio of V/O in the film. This was found to be 0.4 ± 0.02 thus indicating that the films are . The result was confirmed by use of the nuclear reaction ¹⁶O(d,p)¹⁷O.