Electronic Transport in Doped a‐Ge and a‐Si Prepared by DC Cathodic Sputtering
- 1 August 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 88 (2), 555-561
- https://doi.org/10.1002/pssb.2220880220
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Dopage du Si amorphe par la méthode de pulvérisation cathodique et propriétés de transport des couches dopées au P et au BRevue de Physique Appliquée, 1978
- Hall effect and impurity conduction in substitutionally doped amorphous siliconPhilosophical Magazine, 1977
- Photo and dark conductivity of doped amorphous siliconPhysica Status Solidi (b), 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Use of hydrogenation in the study of the transport properties of amorphous germaniumPhysical Review B, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Transport properties of amorphous germanium prepared by the glow discharge techniqueJournal of Non-Crystalline Solids, 1976