Photoluminescence studies of the Mn2+ d-levels in Cd1−xMnxTe

Abstract

We report on the evidence from photoluminescence measurements of the relative positions of the localized d‐levels of the Mn²⁺ ions with respect to the conduction and valence bands of Cd_1−xMn_xTe. The results indicate that the ground state ⁶S is approximately 0.8 eV inside the valence band for all compositions up to x=0.7. The first excited state ⁴G is deep inside the gap, and it represents an energy level that may substantially affect the lifetime and recombination characteristics of the carriers in the Cd_1−xMn_xTe system.