Alloyed Junction Avalanche Transistors
- 1 September 1955
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 34 (5), 883-902
- https://doi.org/10.1002/j.1538-7305.1955.tb03783.x
Abstract
A new device, the avalanche transistor, is described. Its properties derive from the utilization of the multiplication inherent in the breakdown process of reverse-biased semiconductor junctions. These junction transistors have regions of designable ...Keywords
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