A New Method of Electron-Probe Microanalysis for Determining the Degree of Oxidation in Silicon Oxides
- 1 January 1975
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The detection of light elements by X-ray emission spectroscopy with use of low-energy satellite peaksThe Analyst, 1973
- Zur quantitativen Elektronenstrahlmikroanalyse dünner Si-O‐SchichtenCrystal Research and Technology, 1972
- The origin and intensities of low energy satellite lines in X-ray emission spectra: a molecular orbital interpretationJournal of Physics C: Solid State Physics, 1970
- Silicon valence in SiO films studied by X-ray emissionSolid State Communications, 1964