High-speed planar InP/InGaAs avalanche photodiode fabricated by vapour phase epitaxy

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Abstract
A high-speed planar InP/InGaAs avalanche photodiode (APD) with p--n−-n reach-through structure was realised by vapour phase epitaxy and Zn double diffusion. The criterion for achieving a high-speed response has been revealed. Performance of the InGaAs/InP-APD was confirmed to exceed that for Ge-APD in a 2 Gbit s transmission experiment.