Structural properties of a-SiC:H- and a-SiN:H-Alloys from XPS-analyses and IR-absorption
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 873-876
- https://doi.org/10.1016/0022-3093(85)90799-9
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Electronic structure of hydrogenated and unhydrogenated amorphous: A photoemission studyPhysical Review B, 1984
- Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or EthyleneJapanese Journal of Applied Physics, 1984
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- a-SiC:H/a-Si:H heterojunction solar cell having more than 7.1% conversion efficiencyApplied Physics Letters, 1981
- Photoreceptor of a-Si:H with diodelike structure for electrophotographyJournal of Applied Physics, 1981
- Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectraPhilosophical Magazine Part B, 1981
- Infrared Spectrum and Structure of Hydrogenated Amorphous SiliconPhysica Status Solidi (b), 1980
- X-ray photoelectron spectroscopy and Auger electron spectroscopy studies of glow discharge Si1−xCx:H filmsJournal of Applied Physics, 1980
- Vibrational spectrum of hydrogenated amorphous Si-C filmsPhysica Status Solidi (b), 1979
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977