Fabrication of the single grained PZT thin film device
- 1 May 1997
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 196 (1), 1-4
- https://doi.org/10.1080/00150199708224120
Abstract
Electrical degradations of the PZT thin films such as fatigue, aging and the high leakage current were mainly caused by the grain boundaries of the polycrystalline PZT film. In this work, several processes for the fabrication of the single grained PZT film were suggested and the electrical properties of the single grained film prepared by SRCC(Selective Radiation Controlled Crystallization) were investigated. The single grained PZT film showed excellent conduction properties(JLC∼1×10−8A/cm2) and abnormally high dielectric constant(εr∼12,000).Keywords
This publication has 3 references indexed in Scilit:
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