Carrier mobilities in silicon empirically related to doping and field
- 1 January 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (12), 2192-2193
- https://doi.org/10.1109/proc.1967.6123
Abstract
Equations are presented which fit the experimental dependence of carrier mobilities on doping density and field strength in silicon. The curve-fitting procedures are described.Keywords
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