Problems in designing thin-film accumulation-mode p-channel SOI MOSFETs for CMOS digital circuit environment

Abstract

A back-accumulation conduction mechanism ignored in previously-published analyses is shown to be the prime factor in the definition of the threshold voltage of the thin-film accumulation-mode p-channcl SOI MOSFET when the device is integrated in a typical digital circuit environment. A new formulation which overcomes this problem is presented, then used to discuss problems of a tradeoff between film doping and threshold voltage as a function of other technological parameters.