Boron Redistribution in Sintered α‐SiC During Thermal Oxidation
- 2 June 1981
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 64 (6), 332-335
- https://doi.org/10.1111/j.1151-2916.1981.tb10298.x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Oxidation Kinetics of Hot‐Pressed and Sintered α‐SiCJournal of the American Ceramic Society, 1981
- Analytic correction of edge effects in ion-beam sputtered depth profilesJournal of Vacuum Science and Technology, 1980
- Clinical chemistryAnalytical Chemistry, 1977
- In situ spectrochemical analysis of solid surfaces by ion beam sputteringAnalytical Chemistry, 1977
- Boron Segregation at Si ‐ SiO2 Interface as a Function of Temperature and OrientationJournal of the Electrochemical Society, 1976
- Effect of Alumina Content on the Oxidation of Hot‐Pressed Silicon CarbideJournal of the American Ceramic Society, 1975
- Impurity Redistribution during Silicon Epitaxial Growth and Semiconductor Device ProcessingJournal of the Electrochemical Society, 1974
- Surface Composition by Analysis of Neutral and Ion Impact RadiationPublished by Springer Nature ,1974
- Diffusivity Summary of B, Ga, P, As, and Sb in SiO[sub 2]Journal of the Electrochemical Society, 1973
- Thermal Oxidation of Heavily Doped SiliconJournal of the Electrochemical Society, 1965