RHEED investigation of Ge surface segregation during gas source MBE of
- 20 March 1993
- journal article
- Published by Elsevier in Surface Science
- Vol. 284 (3), 305-314
- https://doi.org/10.1016/0039-6028(93)90501-a
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Step-driven lateral segregation and long-range ordering during epitaxial growthPhysical Review Letters, 1992
- Direct imaging of interfacial ordering in ultrathin ( superlatticesPhysical Review Letters, 1991
- Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of SbJapanese Journal of Applied Physics, 1990
- Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4Journal of Vacuum Science & Technology A, 1990
- Chemical ordering and boundary structure in strained-layer Si-Ge superlatticesPhysical Review Letters, 1989
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Silicon/germanium strained layer superlatticesJournal of Crystal Growth, 1989
- New Mechanism for Hydrogen Desorption from Covalent Surfaces: The Monohydride Phase on Si(100)Physical Review Letters, 1989
- Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high-energy electron diffraction during molecular beam epitaxyApplied Physics Letters, 1986
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986