EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAs
- 15 July 1963
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (2), 31-33
- https://doi.org/10.1063/1.1753863
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCEApplied Physics Letters, 1963
- Behavior of selenium in gallium arsenideJournal of Physics and Chemistry of Solids, 1963
- Recombination Radiation in GaAsPhysical Review B, 1963
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962
- Tunneling-Assisted Photon Emission in Gallium ArsenideJunctionsPhysical Review Letters, 1962
- Interband Transitions and Maser ActionPhysical Review B, 1962
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Optical Absorption of Arsenic-Doped Degenerate GermaniumPhysical Review B, 1962
- Infrared Absorption in Heavily Doped-Type GermaniumPhysical Review B, 1962