Copper precipitation in long-time diffused silicon
- 1 January 1983
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 18 (3), 297-305
- https://doi.org/10.1002/crat.2170180303
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- On the interaction between crystal defects and impurities in silicon investigated by electron microscopic methodsPhysica Status Solidi (a), 1980
- The interaction between vacancy emitting/absorbing precipitates and dislocations in silicon as investigated by transmission electron microscopyPhilosophical Magazine A, 1978
- Precipitation of copper in siliconJournal of Applied Physics, 1973
- Transmission electron microscope investigation of the growth of copper precipitate colonies in siliconJournal of Applied Physics, 1973
- Precipitation in High-Purity Silicon Single CrystalsJournal of Applied Physics, 1971